- RS Stock No.:
- 145-3284
- Mfr. Part No.:
- NGTB25N120FL3WG
- Manufacturer:
- onsemi
60 In stock for delivery within 4 working days
Added
Price Each (In a Tube of 30)
SGD8.129
(exc. GST)
SGD8.861
(inc. GST)
Units | Per unit | Per Tube* |
30 - 60 | SGD8.129 | SGD243.87 |
90 - 120 | SGD7.824 | SGD234.72 |
150 + | SGD7.335 | SGD220.05 |
*price indicative |
- RS Stock No.:
- 145-3284
- Mfr. Part No.:
- NGTB25N120FL3WG
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 100 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 349 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 16.25 x 5.3 x 21.4mm |
Maximum Operating Temperature | +175 °C |
Gate Capacitance | 3085pF |
Minimum Operating Temperature | -55 °C |