ON Semiconductor FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 64 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±25V
Package Type TO-264
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 20mm
Width 5mm
Height 26mm
Dimensions 20 x 5 x 26mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
425 In stock for delivery within 4 working days
Price Each (In a Tube of 25)
SGD 9.139
(exc. GST)
SGD 9.779
(inc. GST)
units
Per unit
Per Tube*
25 - 25
SGD9.139
SGD228.475
50 - 100
SGD8.873
SGD221.825
125 - 225
SGD8.634
SGD215.85
250 - 475
SGD8.418
SGD210.45
500 +
SGD8.222
SGD205.55
*price indicative