STMicroelectronics GH50H65DRB2-7AG IGBT, 108 A 650 V, 7-Pin H2PAK-7, Surface

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1 - 9SGD4.48
10 - 99SGD4.04
100 - 499SGD3.73
500 - 999SGD3.45
1000 +SGD3.10

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Packaging Options:
RS Stock No.:
330-362
Mfr. Part No.:
GH50H65DRB2-7AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

108A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

385W

Number of Transistors

1

Package Type

H2PAK-7

Mount Type

Surface

Pin Count

7

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Length

15.25mm

Height

4.8mm

Width

24.3 mm

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics newest IGBT 650 HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

AEC-Q101 qualified

Maximum junction temperature TJ equal to 175 °C

High speed switching series

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive VCE(sat) temperature coefficient

Co-packed with high ruggedness rectifier diode

Excellent switching performance thanks to the extra driving kelvin pin

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