STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface
- RS Stock No.:
- 285-638
- Mfr. Part No.:
- STGHU30M65DF2AG
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD5.10
(exc. GST)
SGD5.56
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 595 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | SGD5.10 |
| 10 - 99 | SGD4.60 |
| 100 + | SGD4.23 |
*price indicative
- RS Stock No.:
- 285-638
- Mfr. Part No.:
- STGHU30M65DF2AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 84A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 441W | |
| Number of Transistors | 1 | |
| Configuration | Dual Gate | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 14.1 mm | |
| Length | 11.9mm | |
| Standards/Approvals | AEC-Q101 | |
| Height | 3.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 84A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 441W | ||
Number of Transistors 1 | ||
Configuration Dual Gate | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 175°C | ||
Width 14.1 mm | ||
Length 11.9mm | ||
Standards/Approvals AEC-Q101 | ||
Height 3.6mm | ||
Automotive Standard AEC-Q101 | ||
This STMicroelectronics device is an IGBT developed using an Advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Maximum junction temperature TJ = 175 °C
6 μs of minimum short circuit withstand time
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Excellent switching performance thanks to the extra driving kelvin pin
Related links
- STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT 7-Pin HU3PAK, Surface Mount
- STMicroelectronics SCT0 Power MOSFET 650 V, 7-Pin HU3PAK SCT027HU65G3AG
- STMicroelectronics 650 V 30 A Schottky Diode SiC Schottky 7-Pin HU3PAK STPSC30G065L2Y
- STMicroelectronics N-Channel STHU65 Type N-Channel MOSFET 650 V N, 7-Pin HU3PAK
- STMicroelectronics Sct N channel-Channel Power MOSFET 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG
- STMicroelectronics N-Channel STHU65 Type N-Channel MOSFET 650 V N, 7-Pin HU3PAK STHU65N050DM9AG
- STMicroelectronics SCT0 MOSFET 1200 V, 7-Pin HU3PAK SCT019HU120G3AG
- STMicroelectronics STHU36N Type N-Channel MOSFET 600 V, 7-Pin HU3PAK STHU36N60DM6AG