IXYS IXGH35N120B IGBT, 70 A 1200 V, 3-Pin TO-247AD, Through Hole
- RS Stock No.:
- 194-748
- Mfr. Part No.:
- IXGH35N120B
- Manufacturer:
- IXYS
Discontinued product
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- RS Stock No.:
- 194-748
- Mfr. Part No.:
- IXGH35N120B
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 70 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | TO-247AD |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Dimensions | 16.26 x 5.3 x 21.46mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |