Renesas Electronics HIP2210FRTZ MOSFET Gate Driver, 1.69 mA 10-Pin 100 V, SOIC

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Subtotal (1 pack of 5 units)*

SGD12.87

(exc. GST)

SGD14.03

(inc. GST)

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Units
Per unit
Per Pack*
5 - 20SGD2.574SGD12.87
25 - 45SGD2.198SGD10.99
50 - 95SGD2.156SGD10.78
100 - 245SGD1.856SGD9.28
250 +SGD1.76SGD8.80

*price indicative

Packaging Options:
RS Stock No.:
264-3550
Mfr. Part No.:
HIP2210FRTZ
Manufacturer:
Renesas Electronics
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Brand

Renesas Electronics

Product Type

Gate Driver Module

Output Current

1.69mA

Pin Count

10

Fall Time

790ns

Package Type

SOIC

Driver Type

MOSFET

Rise Time

20ns

Minimum Supply Voltage

100V

Maximum Supply Voltage

100V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Series

HIP2210

Width

4 mm

Standards/Approvals

RoHS

Length

5mm

Height

1.75mm

Automotive Standard

No

COO (Country of Origin):
MY
The Renesas Electronics high-frequency half-bridge NMOS FET drivers. This is a tri-level PWM input with programmable dead time. Its wide operating supply range of 6V to

18V and integrated high-side bootstrap diodecsupports driving the high-side and low-side NMOS in 100V half-bridge applications.

Integrated 0.5Ω typical bootstrap diode

Robust noise tolerance

VDD and boot undervoltage lockout

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