Cypress Semiconductor 256kbit SPI FRAM Memory 8-Pin SOIC, FM25W256-G
- RS Stock No.:
- 828-2834
- Mfr. Part No.:
- FM25W256-G
- Manufacturer:
- Cypress Semiconductor
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- RS Stock No.:
- 828-2834
- Mfr. Part No.:
- FM25W256-G
- Manufacturer:
- Cypress Semiconductor
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Cypress Semiconductor | |
| Memory Size | 256kbit | |
| Organisation | 32K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.978 x 3.987 x 1.478mm | |
| Length | 4.98mm | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Width | 3.987mm | |
| Height | 1.478mm | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Number of Words | 32K | |
| Minimum Operating Temperature | -40 °C | |
| Number of Bits per Word | 8bit | |
| Select all | ||
|---|---|---|
Brand Cypress Semiconductor | ||
Memory Size 256kbit | ||
Organisation 32K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.978 x 3.987 x 1.478mm | ||
Length 4.98mm | ||
Maximum Operating Supply Voltage 5.5 V | ||
Width 3.987mm | ||
Height 1.478mm | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
Number of Words 32K | ||
Minimum Operating Temperature -40 °C | ||
Number of Bits per Word 8bit | ||
- COO (Country of Origin):
- TH
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.