- RS Stock No.:
- 194-8979
- Mfr. Part No.:
- CY15E016Q-SXE
- Manufacturer:
- Cypress Semiconductor
Discontinued product
- RS Stock No.:
- 194-8979
- Mfr. Part No.:
- CY15E016Q-SXE
- Manufacturer:
- Cypress Semiconductor
Technical data sheets
Legislation and Compliance
Product Details
A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the CY15E016Q performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The CY15E016Q is capable of supporting 1013 read/write cycles, or 10 million times more write cycles than EEPROM. These capabilities make the CY15E016Q ideal for nonvolatile memory applications requiring frequent or rapid writes.
Specifications
Attribute | Value |
---|---|
Memory Size | 16kbit |
Organisation | 2K x 8 bit |
Interface Type | Serial-SPI |
Data Bus Width | 8bit |
Mounting Type | Surface Mount |
Package Type | SOIC |
Pin Count | 8 |
Dimensions | 4.97 x 3.98 x 1.47mm |
Maximum Operating Supply Voltage | 5.5 V |
Maximum Operating Temperature | +125 °C |
Number of Bits per Word | 8bit |
Automotive Standard | AEC-Q100 |
Minimum Operating Temperature | -40 °C |
Number of Words | 2K |
Minimum Operating Supply Voltage | 4.5 V |