Toshiba, RN1106(F) NPN Digital Transistor, 100 mA 50 V 4.7 kΩ, Ratio Of 0.1, 3-Pin ESM

  • RS Stock No. 540-6554
  • Mfr. Part No. RN1106(F)
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): JP
Product Details

Transistor with Built-in Resistor, BRT Series, Toshiba

Built-in bias resistors, use of fewer parts enables device size reduction and space-saving assembly
Wide resistance-value range makes product suitable for diverse applications
Complementary to products from RN1101 / RN2101 to RN1118 / RN2118
Applications: switching, inverter circuits, interface circuits, driver circuits
SSM package

//media.rs-online.com/t_line/LJ317606-01.gif
//media.rs-online.com/t_line/LJ317608-01.gif

Digital Transistors, Toshiba

Resistor-equipped bipolar transistors, also known as “Digital Transistors” or “Bias Resistor Transistors”, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.

Specifications
Attribute Value
Transistor Type NPN
Number of Elements per Chip 1
Maximum Continuous Collector Current 100 mA
Maximum Collector Emitter Voltage 50 V
Typical Input Resistor 4.7 kΩ
Mounting Type Surface Mount
Package Type ESM
Pin Count 3
Minimum DC Current Gain 80
Transistor Configuration Single
Maximum Collector Emitter Saturation Voltage 0.3 V
Maximum Emitter Base Voltage 5 V
Typical Resistor Ratio 0.1
Height 0.7mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
Length 1.6mm
Dimensions 1.6 x 0.8 x 0.7mm
Width 0.8mm
120 In stock for delivery within 3 working days
Price Each (In a Pack of 5)
SGD 0.168
(exc. GST)
SGD 0.18
(inc. GST)
units
Per unit
Per Pack*
5 - 20
SGD0.168
SGD0.84
25 - 120
SGD0.152
SGD0.76
125 - 245
SGD0.138
SGD0.69
250 - 495
SGD0.128
SGD0.64
500 +
SGD0.118
SGD0.59
*price indicative
Packaging Options:
Related Products
A range of NXP BISS (Breakthrough In Small ...
Description:
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results ...
Single digital transistors from Toshiba with integrated biasing ...
Description:
Single digital transistors from Toshiba with integrated biasing resistors allowing direct drive from digital sources. Both NPN and PNP types are available.
N-Channel Small Signal MOSFET 60V 115mA 7.5 Ω. ...
Description:
N-Channel Small Signal MOSFET 60V 115mA 7.5 Ω.
Typical applications are DC-DC converters and power management ...
Description:
Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such ...