ON Semiconductor, BD677G

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

The Medium Power NPN Darlington Bipolar Power Transistor is for use as output devices in complementary general-purpose amplifier applications.

High DC Current Gain hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
Monolithic Construction
BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682
BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
Pb-Free Packages are Available

Attribute Value
Transistor Type NPN
Number of Elements per Chip 1
Maximum Continuous Collector Current 4 A
Maximum Collector Emitter Voltage 60 V dc
Mounting Type Through Hole
Package Type TO-225
Pin Count 3
Minimum DC Current Gain 1
Transistor Configuration Single
Maximum Power Dissipation 40 W
Maximum Collector Emitter Saturation Voltage 2.5 V dc
Maximum Emitter Base Voltage 5 V dc
Configuration Single
Dimensions 7.8 x 3 x 11.1mm
Maximum Operating Temperature +150 °C
Height 11.1mm
Length 7.8mm
Width 3mm
Minimum Operating Temperature -55 °C
2425 In stock for delivery within 3 working days
Price Each (In a Pack of 25)
SGD 0.915
(exc. GST)
SGD 0.979
(inc. GST)
Per unit
Per Pack*
25 - 25
50 - 75
100 - 225
250 +
*price indicative
Packaging Options: