ON Semiconductor, MJF3055G

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): KR
Product Details

The Bipolar Power Transistor is specifically designed for general purpose amplifier and switching applications.

Isolated Overmold Package (1500 Volts RMS Min)
Electrically Similar to the Popular MJE3055T and MJE2955T
Collector-Emitter Sustaining Voltage VCEO(sus) 90 Volts
10 Amperes Rated Collector Current
No Isolating Washers Required
Reduced System Cost

Pb-Free Packages are Available

Specifications
Attribute Value
Transistor Type NPN
Number of Elements per Chip 1
Maximum Continuous Collector Current 10 A
Maximum Collector Emitter Voltage 90 (Breakdown) V dc
Mounting Type Through Hole
Package Type TO-220
Pin Count 3
Minimum DC Current Gain 5
Maximum Power Dissipation 30 W
Transistor Configuration Single
Maximum Collector Emitter Saturation Voltage 2.5 V dc
Maximum Emitter Base Voltage 5 V dc
Configuration Single
Length 10.53mm
Height 9.28mm
Maximum Operating Temperature +150 °C
Dimensions 10.53 x 4.83 x 9.28mm
Width 4.83mm
Minimum Operating Temperature -55 °C
250 In stock for delivery within 3 working days
Price Each (In a Tube of 50)
SGD 2.10
(exc. GST)
SGD 2.25
(inc. GST)
units
Per unit
Per Tube*
50 - 200
SGD2.10
SGD105.00
250 - 450
SGD1.674
SGD83.70
500 - 1200
SGD1.479
SGD73.95
1250 - 2450
SGD1.167
SGD58.35
2500 +
SGD1.034
SGD51.70
*price indicative