onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

RS Stock No.:: 790-5315P
Mfr. Part No.:: MJD112-1G
Manufacturer:: onsemi

Technical data sheets (2)

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

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Available for back order.

Price Each (Supplied in a Tube)

SGD1.008

(exc. GST)

SGD1.099

(inc. GST)

Units	Per unit
30 - 60	SGD1.008
75 - 135	SGD0.977
150 - 285	SGD0.947
300 +	SGD0.919

Alternative

This product is not currently available. Here is our alternative recommendation.

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

RS Stock No.: 178-4811

Price Each (In a Tube of 75)

SGD0.841

(exc. GST)

SGD0.917

(inc. GST)

RS Stock No.:: 790-5315P
Mfr. Part No.:: MJD112-1G
Manufacturer:: onsemi

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	2 A
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Package Type	IPAK (TO-251)
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	1000
Maximum Base Emitter Saturation Voltage	4 V
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	3 V
Maximum Collector Cut-off Current	20µA
Maximum Power Dissipation	20 W
Maximum Operating Temperature	+150 °C
Length	6.73mm
Dimensions	6.73 x 2.38 x 6.35mm
Width	2.38mm
Height	6.35mm
Minimum Operating Temperature	-65 °C

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

Technical data sheets (2)

Alternative

NPN Darlington Transistors, ON Semiconductor

Standards