onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

RS Stock No.:: 688-1502
Mfr. Part No.:: MJ11015G
Manufacturer:: onsemi

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

This image is representative of the product range

190 In stock for delivery within 4 working days

Added

Price Each (In a Pack of 2)

SGD11.645

(exc. GST)

SGD12.693

(inc. GST)

Units	Per unit	Per Pack*
2 - 8	SGD11.645	SGD23.29
10 - 38	SGD11.405	SGD22.81
40 - 98	SGD11.065	SGD22.13
100 - 198	SGD10.735	SGD21.47
200 +	SGD10.42	SGD20.84
*price indicative

RS Stock No.:: 688-1502
Mfr. Part No.:: MJ11015G
Manufacturer:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

PNP Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MJ11015G is a 30A, 120V PNP Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• PNP Polarity

Versions Available:
688-1502 - pack of 2
103-5055 - tray of 100

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Transistor Type	PNP
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	120 V
Maximum Emitter Base Voltage	5 V
Package Type	TO-204
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	200
Maximum Base Emitter Saturation Voltage	5 V
Maximum Collector Base Voltage	120 V
Maximum Collector Emitter Saturation Voltage	4 V
Length	39.37mm
Height	8.51mm
Width	26.67mm
Maximum Operating Temperature	+200 °C
Dimensions	39.37 x 26.67 x 8.51mm
Minimum Operating Temperature	-55 °C