ON Semiconductor, TIP121G

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. TIP120, TIP121, TIP122 (NPN), TIP125, TIP126, TIP127 (PNP) are complementary devices.

High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc
Collector-Emitter Sustaining Voltage @ 100 mA
VCEO(sus) = 60 Vdc (Min) TIP120, TIP125
VCEO(sus) = 80 Vdc (Min) TIP121, TIP126
VCEO(sus) = 100 Vdc (Min) TIP122, TIP127
Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package

Specifications
Attribute Value
Transistor Type NPN
Maximum Continuous Collector Current 5 A dc
Maximum Collector Emitter Voltage 80 V dc
Maximum Emitter Base Voltage 5 V dc
Package Type TO-220
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Configuration Single
Number of Elements per Chip 1
Minimum DC Current Gain 1000
Maximum Collector Base Voltage 80 V dc
Maximum Collector Emitter Saturation Voltage 4 V dc
Dimensions 10.53 x 4.83 x 15.75mm
Maximum Power Dissipation 65 W
Width 4.83mm
Minimum Operating Temperature -65 °C
Length 10.53mm
Height 15.75mm
Maximum Operating Temperature +150 °C
400 In stock for delivery within 4 working days
Price Each (In a Pack of 25)
Was SGD0.805
SGD 0.74
(exc. GST)
SGD 0.79
(inc. GST)
units
Per unit
Per Pack*
25 +
SGD0.74
SGD18.50
*price indicative
Packaging Options:
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