onsemi 2N6387G NPN Darlington Transistor, 10 A dc 60 V dc HFE:1000, 3-Pin TO-220
- RS Stock No.:
- 186-7907
- Mfr. Part No.:
- 2N6387G
- Manufacturer:
- onsemi
230 In stock for delivery within 4 working days
Price Each (In a Pack of 10)
SGD1.499
(exc. GST)
SGD1.634
(inc. GST)
| Units | Per unit | Per Pack* |
| 10 - 10 | SGD1.499 | SGD14.99 |
| 20 + | SGD1.424 | SGD14.24 |
| *price indicative | ||
- RS Stock No.:
- 186-7907
- Mfr. Part No.:
- 2N6387G
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
The Power 8A 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.
High DC Current Gain - hFE=2500 (Typ) @Ic=4.0 Adc
Collector-Emitter Sustaining Voltage - @ 100 mAdc, Vceo(sus) = 60 Vdc (Min) - 2N6387, Vceo (sus) = 80 Vdc (Min) - 2N6388
Collector-Emitter Sustaining Voltage - @ 100 mAdc , Vceo(sus) = 60 Vdc (Min) - 2N6387, Vceo (sus) = 80 Vdc (Min) - 2N6388
Low Collector-Emitter Saturation Voltage- Vce(sat) = 2.0 Vdc (Max) @ Ic=5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
T0-220AB Compact Package
Collector-Emitter Sustaining Voltage - @ 100 mAdc, Vceo(sus) = 60 Vdc (Min) - 2N6387, Vceo (sus) = 80 Vdc (Min) - 2N6388
Collector-Emitter Sustaining Voltage - @ 100 mAdc , Vceo(sus) = 60 Vdc (Min) - 2N6387, Vceo (sus) = 80 Vdc (Min) - 2N6388
Low Collector-Emitter Saturation Voltage- Vce(sat) = 2.0 Vdc (Max) @ Ic=5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
T0-220AB Compact Package
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum Continuous Collector Current | 10 A dc |
| Maximum Collector Emitter Voltage | 60 V dc |
| Maximum Emitter Base Voltage | 5 V dc |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain | 1000 |
| Maximum Collector Base Voltage | 60 V dc |
| Maximum Collector Emitter Saturation Voltage | 3 V dc |
| Length | 10.53mm |
| Maximum Operating Temperature | +150 °C |
| Width | 4.83mm |
| Maximum Power Dissipation | 65 W |
| Minimum Operating Temperature | -65 °C |
| Dimensions | 10.53 x 4.83 x 15.75mm |
| Height | 15.75mm |