ON Semi MJ11016G NPN Darlington Pair, 30 A 120 V HFE:200, 3-Pin TO-204

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CZ
Product Details

NPN Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MJ11016G is a 30A, 120V NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• NPN Polarity

Versions Available:
463-000 - pack of 2
100-7565 - tray of 100

Specifications
Attribute Value
Transistor Type NPN
Maximum Continuous Collector Current 30 A
Maximum Collector Emitter Voltage 120 V
Maximum Emitter Base Voltage 5 V
Package Type TO-204
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Number of Elements per Chip 1
Minimum DC Current Gain 200
Maximum Base Emitter Saturation Voltage 5 V
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 4 V
Height 8.51mm
Maximum Operating Temperature +200 °C
Dimensions 39.37 x 26.67 x 8.51mm
Width 26.67mm
Length 39.37mm
Minimum Operating Temperature -55 °C
400 In stock for delivery within 3 working days
Price Each (In a Tray of 100)
SGD 7.987
(exc. GST)
SGD 8.546
(inc. GST)
units
Per unit
Per Tray*
100 +
SGD7.987
SGD798.70
*price indicative
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