ON Semi MJ11016G NPN Darlington Pair, 30 A 120 V HFE:200, 3-Pin TO-204
- RS Stock No. 122-0071
- Mfr. Part No. MJ11016G
- Manufacturer ON Semiconductor
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
The ON Semiconductor MJ11016G is a 30A, 120V NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.
• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• NPN Polarity
Versions Available:
463-000 - pack of 2
100-7565 - tray of 100
| Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 120 V |
| Maximum Emitter Base Voltage | 5 V |
| Package Type | TO-204 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain | 200 |
| Maximum Base Emitter Saturation Voltage | 5 V |
| Maximum Collector Base Voltage | 120 V |
| Maximum Collector Emitter Saturation Voltage | 4 V |
| Height | 8.51mm |
| Maximum Operating Temperature | +200 °C |
| Dimensions | 39.37 x 26.67 x 8.51mm |
| Width | 26.67mm |
| Length | 39.37mm |
| Minimum Operating Temperature | -55 °C |
