ROHM EMD53T2R Dual NPN + PNP Transistor, 100 (NPN) mA, 100 (PNP) mA, 6-Pin SOT-563

  • RS Stock No. 171-5403
  • Mfr. Part No. EMD53T2R
  • Manufacturer ROHM
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

DTA014E and DTC014E chip in a EMT6 package.

Transistor elements are independent, eliminating interface.
Mounting cost and area can be cut in half.
Lead Free.
Applications:
Portable Data Terminal
Coin Processing Machines
Digital Multimeter: Handy Type
Motor Control: Brushless DC
PLC (Programmable Logic Controller)
AC Servo
Network Attached Storage
DVR/DVS
Motor Control: Stepper Motor
Motor Control: Brushed DC
POS (Point Of Sales System)
Electric Bike
Smart Meter
Embedded PC
Surveillance Camera
X-ray Inspection Machine for Security
Intercom / Baby Monitor
Surveillance Camera for Network
Fingerprint Authentication Device
Machine Vision Camera for Industrial
GFCI(Ground Fault Circuit Interrupter)
Digital Multimeter: Bench Type
Display for EMS
Solar Power Inverters

Specifications
Attribute Value
Transistor Type NPN + PNP
Maximum DC Collector Current 100 (NPN) mA, 100 (PNP) mA
Package Type SOT-563
Mounting Type Surface Mount
Maximum Power Dissipation 150 mW
Minimum DC Current Gain 35
Maximum Operating Frequency 250 MHz
Pin Count 6
Number of Elements per Chip 2
Maximum Operating Temperature +150 °C
Length 1.7mm
Width 1.3mm
Dimensions 1.7 x 1.3 x 0.45mm
Height 0.45mm
Temporarily out of stock - back order for despatch when stock is available
Price Each (On a Reel of 8000)
SGD 0.085
(exc. GST)
SGD 0.091
(inc. GST)
units
Per unit
Per Reel*
8000 - 8000
SGD0.085
SGD680.00
16000 +
SGD0.079
SGD632.00
*price indicative
Related Products
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Low VCEsat (BISS) power transistors single, Meeting the ...
Description:
Low VCEsat (BISS) power transistors single, Meeting the challenges of high efficiency operation, In high power systems, energy efficient operation can be just as important as for low power applications. By minimizing power consumption and heat dissipation, our BISS solutions ...
The Bipolar Power Transistor is designed for general ...
Description:
The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD2955 (PNP) and MJD3055 (NPN) are complementary devices. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)Straight Lead Version in Plastic Sleeves ...
Devices integrating two transistors are available in ultra-compact ...
Description:
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth. Compact complex bipolar power transistorFor DC-DC converterSmall Surface Mount PackagePb Free.