Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Attribute | Value |
---|---|
Transistor Type | PNP |
Maximum DC Collector Current | 100 mA |
Maximum Collector Emitter Voltage | 65 V |
Package Type | TO-92 |
Mounting Type | Through Hole |
Maximum Power Dissipation | 500 mW |
Minimum DC Current Gain | 110 |
Transistor Configuration | Single |
Maximum Collector Base Voltage | -80 V |
Maximum Emitter Base Voltage | -5 V |
Maximum Operating Frequency | 10 MHz |
Pin Count | 3 |
Number of Elements per Chip | 1 |
Length | 5.2mm |
Dimensions | 5.2 x 4.19 x 5.33mm |
Maximum Collector Emitter Saturation Voltage | -650 V |
Width | 4.19mm |
Maximum Base Emitter Saturation Voltage | -800 V |
Maximum Operating Temperature | +150 °C |
Height | 5.33mm |