ON Semi MJD2955T4G PNP Transistor, 10 A, 60 V, 3-Pin DPAK

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

PNP Power Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD2955 (PNP) and MJD3055 (NPN) are complementary devices.

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves ("-1" Suffix)
Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix)
Electrically Similar to MJE2955 and MJE3055
DC Current Gain Specified to 10 Amperes
High Current Gain-Bandwidth Product fT = 2.0 MHz (Min) @ IC = 500 mAdc
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
These are PbFree Packages

Specifications
Attribute Value
Transistor Type PNP
Maximum DC Collector Current 10 A
Maximum Collector Emitter Voltage 60 V
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Maximum Power Dissipation 20 W
Minimum DC Current Gain 5
Transistor Configuration Single
Maximum Collector Base Voltage 70 V dc
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 500 kHz
Pin Count 3
Number of Elements per Chip 1
Maximum Collector Emitter Saturation Voltage 8 V dc
Dimensions 6.73 x 6.22 x 2.38mm
Width 6.22mm
Maximum Operating Temperature +150 °C
Length 6.73mm
Minimum Operating Temperature -55 °C
Height 2.38mm
2500 In stock for delivery within 3 working days
Price Each (On a Reel of 2500)
SGD 0.445
(exc. GST)
SGD 0.476
(inc. GST)
units
Per unit
Per Reel*
2500 +
SGD0.445
SGD1,112.50
*price indicative
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