onsemi Transistor, -200 mA PNP, -65 V, 6-Pin SOT-363
- RS Stock No.:
- 184-4179
- Mfr. Part No.:
- BC856BDW1T1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
SGD117.00
(exc. GST)
SGD129.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | SGD0.039 | SGD117.00 |
| 9000 - 12000 | SGD0.038 | SGD114.00 |
| 15000 - 27000 | SGD0.037 | SGD111.00 |
| 30000 - 57000 | SGD0.035 | SGD105.00 |
| 60000 + | SGD0.032 | SGD96.00 |
*price indicative
- RS Stock No.:
- 184-4179
- Mfr. Part No.:
- BC856BDW1T1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -200mA | |
| Maximum Collector Emitter Voltage Vceo | -65V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Transistor Configuration | Dual | |
| Maximum Collector Base Voltage VCBO | -80V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | -5V | |
| Minimum DC Current Gain hFE | 300 | |
| Transistor Polarity | PNP | |
| Maximum Transition Frequency ft | 100MHz | |
| Maximum Power Dissipation Pd | 380mW | |
| Pin Count | 6 | |
| Maximum Operating Temperature | 150°C | |
| Series | BC856BDW1 | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -200mA | ||
Maximum Collector Emitter Voltage Vceo -65V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Transistor Configuration Dual | ||
Maximum Collector Base Voltage VCBO -80V | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO -5V | ||
Minimum DC Current Gain hFE 300 | ||
Transistor Polarity PNP | ||
Maximum Transition Frequency ft 100MHz | ||
Maximum Power Dissipation Pd 380mW | ||
Pin Count 6 | ||
Maximum Operating Temperature 150°C | ||
Series BC856BDW1 | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Dual PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88, which is designed for low power surface mount applications.
S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free
Related links
- onsemi BC856BDW1T1G Transistor -65 V, 6-Pin SOT-363
- onsemi Transistor -65 V, 6-Pin SOT-363
- onsemi NST65010MW6T1G Transistor -65 V, 6-Pin SOT-363
- onsemi Transistor -40 V, 6-Pin SOT-363
- Nexperia BC856BS -100 mA PNP 6-Pin SOT-363
- Nexperia Transistor -65 V, 6-Pin SOT-363
- Nexperia BCM856BS -100 mA PNP 6-Pin SOT-363
- onsemi Transistor 45 V, 6-Pin SOT-363