NXP, BT151-650R,127, Thyristor, 650V 7.5A, 15mA 3-Pin, TO-220AB

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Phase Control Thyristors, WeEn Semiconductors

Thyristors - WeEn Semiconductors

A Thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased. Thyristors are synonymous to Silicon-Controlled Rectifier (SCR).

Specifications
Attribute Value
Rated Average On-State Current 7.5A
Thyristor Type SCR
Package Type TO-220AB
Repetitive Peak Reverse Voltage 650V
Surge Current Rating 132A
Mounting Type Through Hole
Maximum Gate Trigger Current 15mA
Maximum Gate Trigger Voltage 1.5V
Maximum Holding Current 20mA
Pin Count 3
Length 10.3mm
Width 4.7mm
Height 9.4mm
Dimensions 10.3 x 4.7 x 9.4mm
Repetitive Peak Forward Blocking Voltage 650V
Maximum Operating Temperature +125 °C
Repetitive Peak Off-State Current 0.5mA
Minimum Operating Temperature -40 °C
Peak On-State Voltage 1.75V
1150 In stock for delivery within 4 working days
Price Each (In a Tube of 50)
SGD 0.846
(exc. GST)
SGD 0.905
(inc. GST)
units
Per unit
Per Tube*
50 - 50
SGD0.846
SGD42.30
100 - 200
SGD0.761
SGD38.05
250 - 450
SGD0.692
SGD34.60
500 - 950
SGD0.634
SGD31.70
1000 +
SGD0.586
SGD29.30
*price indicative
Related Products
A Silicon Carbide (SiC) diode is an ultra-high ...
Description:
A Silicon Carbide (SiC) diode is an ultra-high performance power Schottky rectifier. These parts with the -Y suffix to the part number, are of automotive quality, compliant with AEC-Q101. • High efficiency adds value to a power converter• Reduces size ...
The Infineon thinQ!™ Generation 5 offers a new ...
Description:
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved ...
A range of Wolfspeed SiC (Silicon Carbide) Schottky ...
Description:
A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching ...
A Silicon Carbide (SiC) diode is an ultra-high ...
Description:
A Silicon Carbide (SiC) diode is an ultra-high performance power Schottky rectifier. • No or negligible reverse recovery• Switching behaviour independent of temperature• Dedicated to PFC applications• High forward surge capability.