Cypress Semiconductor SRAM, CY62157EV30LL-45BVXI- 8Mbit

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

Thin small outline package (TSOP) I package configurable as 512K ´ 16 or 1M ´ 8 static RAM (SRAM)
High speed: 45 ns
Temperature ranges
Industrial: –40 °C to +85 °C
Automotive-A: –40 °C to +85 °C
Automotive-E: –40 °C to +125 °C
Wide voltage range: 2.20 V to 3.60 V
Pin compatible with CY62157DV30
Ultra low standby power
Typical standby current: 2 μA
Maximum standby current: 8 μA (Industrial)
Ultra low active power
Typical active current: 1.8 mA at f = 1 MHz
Easy memory expansion with CE1, CE2, and OE features
Automatic power down when deselected
Complementary Metal Oxide Semiconductor (CMOS) for optimum speed and power
Available in Pb-free and non Pb-free 48-ball very fine-pitch ball grid array (VFBGA), Pb-free 44-pin thin small outline package (TSOP) II and 48-pin TSOP I packages

SRAM (Static Random Access Memory)

Attribute Value
Memory Size 8Mbit
Organisation 1M x 8 bit, 512K x 16 bit
Number of Words 512K
Number of Bits per Word 8 bit, 16 bit
Maximum Random Access Time 45ns
Address Bus Width 8 bit, 16 bit
Clock Frequency 1MHz
Low Power Yes
Mounting Type Surface Mount
Package Type VFBGA
Pin Count 48
Dimensions 6 x 8 x 0.79mm
Height 0.79mm
Length 6mm
Maximum Operating Temperature -85 °C
Minimum Operating Temperature -40 °C
Minimum Operating Supply Voltage 2.2 V
Width 8mm
Maximum Operating Supply Voltage 3.6 V
783 In stock for delivery within 3 working days
Price Each
SGD 14.68
(exc. GST)
SGD 15.71
(inc. GST)
Per unit
1 - 9
10 - 24
25 - 99
100 - 499
500 +
Packaging Options:
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