Cypress Semiconductor SRAM, CY62148ELL-45ZSXI- 4Mbit, 5

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

Very high speed: 45 ns
Voltage range: 4.5 V to 5.5 V
Pin compatible with CY62148B
Ultra low standby power
Typical standby current: 1 μA
Maximum standby current: 7 μA (Industrial)
Ultra low active power
Typical active current: 2.0 mA at f = 1 MHz
Easy memory expansion with CE, and OE features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for optimum speed and power
Available in Pb-free 32-pin thin small outline package (TSOP) II and 32-pin small-outline integrated circuit (SOIC)[1] packages

SRAM (Static Random Access Memory)

Specifications
Attribute Value
Memory Size 4Mbit
Organisation 512K x 8 bit
Number of Words 512K
Number of Bits per Word 8bit
Maximum Random Access Time 45ns
Address Bus Width 8bit
Clock Frequency 1MHz
Low Power Yes
Mounting Type Surface Mount
Package Type TSOP
Pin Count 32
Dimensions 21.08 x 10.29 x 1.05mm
Height 1.05mm
Width 10.29mm
Minimum Operating Supply Voltage 4.5 V
Minimum Operating Temperature -40 °C
Length 21.08mm
Maximum Operating Supply Voltage 5.5 V
Maximum Operating Temperature -85 °C
397 In stock for delivery within 3 working days
Price Each
SGD 10.90
(exc. GST)
SGD 11.66
(inc. GST)
units
Per unit
1 - 9
SGD10.90
10 - 24
SGD9.55
25 - 99
SGD9.38
100 - 499
SGD8.36
500 +
SGD7.55
Packaging Options:
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