Cypress Semiconductor SRAM, CY62146EV30LL-45ZSXI- 4Mbit

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

Very high speed: 45 ns
Temperature ranges
Industrial: –40 °C to +85 °C
Automotive-A: –40 °C to +85 °C
Wide voltage range: 2.20 V to 3.60 V
Pin compatible with CY62146DV30
Ultra low standby power
Typical standby current: 1 μA
Maximum standby current: 7 μA
Ultra low active power
Typical active current: 2 mA at f = 1 MHz
Easy memory expansion with CE and OE features
Automatic power down when deselected
Complementary metal oxide semiconductor (CMOS) for optimum speed and power
Available in a Pb-free 48-ball very fine-pitch ball grid array (VFBGA) and 44-pin TSOP II Packages

SRAM (Static Random Access Memory)

Attribute Value
Memory Size 4Mbit
Organisation 256K x 16 bit
Number of Words 256K
Number of Bits per Word 16bit
Maximum Random Access Time 45ns
Address Bus Width 16bit
Clock Frequency 1MHz
Low Power Yes
Mounting Type Surface Mount
Package Type TSOP
Pin Count 44
Dimensions 18.51 x 10.26 x 1.04mm
Height 1.04mm
Minimum Operating Temperature -40 °C
Maximum Operating Temperature -85 °C
Minimum Operating Supply Voltage 2.2 V
Width 10.26mm
Maximum Operating Supply Voltage 3.6 V
Length 18.51mm
308 In stock for delivery within 3 working days
Price Each (In a Pack of 2)
SGD 8.24
(exc. GST)
SGD 8.82
(inc. GST)
Per unit
Per Pack*
2 - 8
10 - 18
20 - 98
100 - 498
500 +
*price indicative
Packaging Options:
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