Winbond, W9751G8KB25I

  • RS Stock No. 188-2587
  • Mfr. Part No. W9751G8KB25I
  • Manufacturer Winbond
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

The W9751G8KB is a 512M bits DDR2 SDRAM, and speed involving -18/-25/25I and -3.

Double Data Rate architecture: two data transfers per clock cycle
CAS Latency: 3, 4, 5, 6 and 7
Burst Length: 4 and 8
Bi-directional, differential data strobes (DQS and /DQS ) are transmitted / received with data
Edge-aligned with Read data and center-aligned with Write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CLK and /CLK)
Data masks (DM) for write data
Commands entered on each positive CLK edge, data and data mask are referenced to both edges of /DQS
Posted /CAS programmable additive latency supported to make command and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
Auto-precharge operation for read and write bursts
Auto Refresh and Self Refresh modes
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = Read Latency - 1 (WL = RL - 1)
Interface: SSTL_18

Attribute Value
Memory Size 512Mbit
Organisation 64M x 8 bit
Number of Bits per Word 8bit
Number of Words 64M
Mounting Type Surface Mount
Package Type WBGA
Pin Count 60
Dimensions 12.6 x 8.1 x 0.6mm
Height 0.6mm
Length 12.6mm
Maximum Operating Supply Voltage 1.9 V
Maximum Operating Temperature +95 °C
Minimum Operating Temperature -40 °C
Width 8.1mm
Minimum Operating Supply Voltage 1.7 V
209 In stock for delivery within 4 working days
Price Each (In a Tray of 209)
SGD 3.677
(exc. GST)
SGD 3.934
(inc. GST)
Per unit
Per Tray*
209 - 209
418 - 836
1045 - 4807
5016 +
*price indicative
Related Products
The W9425G6KH is a 256M DDR SDRAM and ...
The W9425G6KH is a 256M DDR SDRAM and speed involving -4/-5/-5I/-5A. Up to 250 MHz Clock FrequencyDouble Data Rate architecture, two data transfers per clock cycleDifferential clock inputs (CLK and /CLK)DQS is edge-aligned with data for Read, center-aligned with data ...
This is a 512Mb Low Power DDR SDRAM ...
This is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 16bits. Burst Type: Sequential or InterleaveStandard Self Refresh ModePASR, ATCSR, Power Down Mode、DPDProgrammable output buffer driver strengthFour internal banks for concurrent operationBidirectional, data strobe ...
The W9812G6KH is a 128M SDRAM and speed ...
The W9812G6KH is a 128M SDRAM and speed involving -5/-5I, -6/-6I and -75. 3.3V± 0.3V power supply Up to 200 MHz Clock Frequency2,097,152 Words ´ 4 banks ´ 16 bits organizationSelf Refresh ModeCAS Latency: 2 and 3Burst Length: 1, 2, ...
The W9825G6KH is a 256M SDRAM and speed ...
The W9825G6KH is a 256M SDRAM and speed involving ... 3.3V ± 0.3V Power SupplyUp to 200 MHz Clock Frequency4,194,304 Words x 4 Banks x 16 Bits OrganizationSelf Refresh Mode: Standard and Low PowerCAS Latency: 2 and 3Burst Length: 1, ...