- RS Stock No.:
- 896-2612
- Mfr. Part No.:
- TRS8E65C,S1AQ(S
- Manufacturer:
- Toshiba
Discontinued product
- RS Stock No.:
- 896-2612
- Mfr. Part No.:
- TRS8E65C,S1AQ(S
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Silicon Carbide (SiC) Schottky Diode, Toshiba
A range of Silicon Carbide (SiC) Schottky barrier diodes from Toshiba suitable for high-efficiency, high speed switching applications.
Low-loss and high-efficiency power conversion
Low leakage current
High-speed switching
Recovery characteristics independent of temperature
Low leakage current
High-speed switching
Recovery characteristics independent of temperature
Diodes and Rectifiers, Toshiba
Specifications
Attribute | Value |
---|---|
Mounting Type | Through Hole |
Package Type | TO-220 |
Maximum Continuous Forward Current | 8A |
Peak Reverse Repetitive Voltage | 650V |
Diode Configuration | Single |
Diode Type | Schottky |
Pin Count | 2 |
Maximum Forward Voltage Drop | 1.7V |
Number of Elements per Chip | 1 |
Diode Technology | SiC Schottky |
Peak Non-Repetitive Forward Surge Current | 40A |