- RS Stock No.:
- 164-7021
- Mfr. Part No.:
- STPSC10H12WL
- Manufacturer:
- STMicroelectronics
156 In stock for delivery within 4 working days
Added
Price Each
SGD7.11
(exc. GST)
SGD7.75
(inc. GST)
Units | Per unit |
1 - 9 | SGD7.11 |
10 + | SGD6.76 |
- RS Stock No.:
- 164-7021
- Mfr. Part No.:
- STPSC10H12WL
- Manufacturer:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating from -40 °C to 175 °C
Low VF
Switching behavior independent of temperature
Robust high voltage periphery
Operating from -40 °C to 175 °C
Low VF
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Mounting Type | Through Hole |
Package Type | DO-247LL |
Maximum Continuous Forward Current | 10A |
Peak Reverse Repetitive Voltage | 1200V |
Diode Configuration | Single |
Rectifier Type | Schottky Diode |
Diode Type | SiC Schottky |
Pin Count | 2 |
Maximum Forward Voltage Drop | 2.25V |
Number of Elements per Chip | 1 |
Diode Technology | SiC Schottky |
Peak Non-Repetitive Forward Surge Current | 420A |