- RS Stock No.:
- 920-0874
- Mfr. Part No.:
- IXFK27N80Q
- Manufacturer:
- IXYS
- RS Stock No.:
- 920-0874
- Mfr. Part No.:
- IXFK27N80Q
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Q Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 27 A |
Maximum Drain Source Voltage | 800 V |
Package Type | TO-264AA |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 320 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Maximum Power Dissipation | 500 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 170 nC @ 10 V |
Length | 19.96mm |
Transistor Material | Si |
Width | 5.13mm |
Height | 26.16mm |
Series | HiperFET, Q-Class |
Minimum Operating Temperature | -55 °C |