P-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB Infineon IRF9530NPBF
- RS Stock No.:
- 919-4860
- Mfr. Part No.:
- IRF9530NPBF
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 02/05/2024, delivery within 4 working days from despatch date
Added
Price Each (In a Tube of 50)
SGD1.224
(exc. GST)
SGD1.334
(inc. GST)
| Units | Per unit | Per Tube* |
| 50 - 50 | SGD1.224 | SGD61.20 |
| 100 - 200 | SGD1.211 | SGD60.55 |
| 250 - 450 | SGD1.178 | SGD58.90 |
| 500 - 950 | SGD1.114 | SGD55.70 |
| 1000 + | SGD0.994 | SGD49.70 |
| *price indicative | ||
- RS Stock No.:
- 919-4860
- Mfr. Part No.:
- IRF9530NPBF
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 14 A |
| Maximum Drain Source Voltage | 100 V |
| Series | HEXFET |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 200 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 79 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 58 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 8.77mm |