N-Channel MOSFET, 1.1 A, 250 V Depletion, 8-Pin DFN Microchip DN2625DK6-G

RS Stock No.:: 916-3725
Mfr. Part No.:: DN2625DK6-G
Manufacturer:: Microchip

N-Channel MOSFET, 1.1 A, 250 V Depletion, 8-Pin DFN Microchip DN2625DK6-G

1430 In stock for delivery within 4 working days

Added

Price Each (In a Pack of 5)

SGD4.744

(exc. GST)

SGD5.171

(inc. GST)

Units	Per unit	Per Pack*
5 - 20	SGD4.744	SGD23.72
25 - 95	SGD4.726	SGD23.63
100 - 295	SGD4.654	SGD23.27
300 - 895	SGD4.444	SGD22.22
900 +	SGD3.84	SGD19.20
*price indicative

RS Stock No.:: 916-3725
Mfr. Part No.:: DN2625DK6-G
Manufacturer:: Microchip

Technical data sheets

Legislation and Compliance

Product Details

DN2625 N-Channel MOSFET Transistors

The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.

Features

Low Gate Threshold Voltage
Designed to be Source-Driven
Low Switching Losses
Low Effective Output Capacitance
Designed for Inductive Loads

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Microchip

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1.1 A
Maximum Drain Source Voltage	250 V
Package Type	DFN
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	3.5 Ω
Channel Mode	Depletion
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	5.1mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	7.04 nC @ 1.5 V
Width	5.1mm
Height	0.85mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.8V