N-Channel MOSFET, 210 A, 75 V, 3-Pin TO-220AB Infineon IRFB3077PBF
- RS Stock No.:
- 913-3960
- Mfr. Part No.:
- IRFB3077PBF
- Manufacturer:
- Infineon
1600 In stock for delivery within 4 working days
Added
Price Each (In a Tube of 50)
SGD3.793
(exc. GST)
SGD4.134
(inc. GST)
| Units | Per unit | Per Tube* |
| 50 - 50 | SGD3.793 | SGD189.65 |
| 100 - 200 | SGD3.752 | SGD187.60 |
| 250 - 450 | SGD3.65 | SGD182.50 |
| 500 - 950 | SGD3.453 | SGD172.65 |
| 1000 + | SGD3.08 | SGD154.00 |
| *price indicative | ||
- RS Stock No.:
- 913-3960
- Mfr. Part No.:
- IRFB3077PBF
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 210 A |
| Maximum Drain Source Voltage | 75 V |
| Series | HEXFET |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 370 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Width | 4.82mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 160 nC @ 10 V |
| Length | 10.66mm |
| Minimum Operating Temperature | -55 °C |
| Height | 9.02mm |