2N7000-D26Z N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 200 mA
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 9 Ω
Minimum Gate Threshold Voltage 0.8V
Maximum Gate Source Voltage -40 V, +40 V
Package Type TO-92
Mounting Type Through Hole
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Maximum Power Dissipation 400 mW
Width 4.19mm
Length 5.2mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
Height 5.33mm
Transistor Material Si
Number of Elements per Chip 1
2300 In stock for delivery within 3 working days
Price Each (In a Pack of 100)
SGD 0.195
(exc. GST)
SGD 0.209
(inc. GST)
units
Per unit
Per Pack*
100 - 100
SGD0.195
SGD19.50
200 - 400
SGD0.167
SGD16.70
500 - 900
SGD0.15
SGD15.00
1000 - 1900
SGD0.144
SGD14.40
2000 +
SGD0.142
SGD14.20
*price indicative
Packaging Options:
Related Products
The Infineon SIPMOS® small Signal P- channel MOSFETs ...
Description:
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety ...
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, ...
Description:
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion ...
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, ...
Description:
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion ...
The Infineon SIPMOS® small Signal P- channel MOSFETs ...
Description:
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety ...