- RS Stock No.:
- 865-1230
- Mfr. Part No.:
- FCA20N60F
- Manufacturer:
- onsemi
32 In stock for delivery within 4 working days
Added
Price Each
SGD9.47
(exc. GST)
SGD10.32
(inc. GST)
Units | Per unit |
1 - 9 | SGD9.47 |
10 - 49 | SGD9.14 |
50 - 99 | SGD8.36 |
100 - 249 | SGD7.89 |
250 + | SGD7.55 |
- RS Stock No.:
- 865-1230
- Mfr. Part No.:
- FCA20N60F
- Manufacturer:
- onsemi
Legislation and Compliance
Product Details
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 20 A |
Maximum Drain Source Voltage | 600 V |
Package Type | TO-3PN |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 190 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 208 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Typical Gate Charge @ Vgs | 75 nC @ 10 V |
Length | 16.2mm |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Width | 5mm |
Maximum Operating Temperature | +150 °C |
Height | 20.1mm |
Series | SuperFET |
Minimum Operating Temperature | -55 °C |