HUFA76419D3ST N-Channel MOSFET, 20 A, 60 V UltraFET, 3-Pin DPAK ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 20 A
Maximum Drain Source Voltage 60 V
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 37 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 75 W
Transistor Configuration Single
Maximum Gate Source Voltage -16 V, +16 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Series UltraFET
Height 2.39mm
Typical Gate Charge @ Vgs 23 nC @ 10 V
Length 6.73mm
Transistor Material Si
Maximum Operating Temperature +175 °C
Width 6.22mm
100 In stock for delivery within 3 working days
Price Each (In a Pack of 10)
SGD 1.441
(exc. GST)
SGD 1.542
(inc. GST)
units
Per unit
Per Pack*
10 - 10
SGD1.441
SGD14.41
20 - 40
SGD1.44
SGD14.40
50 - 90
SGD1.209
SGD12.09
100 - 190
SGD1.082
SGD10.82
200 +
SGD1.04
SGD10.40
*price indicative
Packaging Options:
Related Products
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
The Supertex range of N-channel enhancement-mode (normally-off) DMOS ...
Description:
The Supertex range of N-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching ...
The Supertex range of P-channel enhancement-mode (normally-off) DMOS ...
Description:
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching ...
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.