- RS Stock No.:
- 857-6883
- Mfr. Part No.:
- IPP120P04P4L03AKSA1
- Manufacturer:
- Infineon
1500 In stock for delivery within 4 working days
Added
Price Each (In a Tube of 500)
SGD3.085
(exc. GST)
SGD3.363
(inc. GST)
Units | Per unit | Per Tube* |
500 - 500 | SGD3.085 | SGD1,542.50 |
1000 - 2000 | SGD3.051 | SGD1,525.50 |
2500 - 4500 | SGD2.969 | SGD1,484.50 |
5000 - 9500 | SGD2.808 | SGD1,404.00 |
10000 + | SGD2.505 | SGD1,252.50 |
*price indicative |
- RS Stock No.:
- 857-6883
- Mfr. Part No.:
- IPP120P04P4L03AKSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 120 A |
Maximum Drain Source Voltage | 40 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 5.2 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 136 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +16 V |
Typical Gate Charge @ Vgs | 180 nC @ 10 V |
Length | 10mm |
Maximum Operating Temperature | +175 °C |
Width | 4.4mm |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Series | OptiMOS P |
Height | 15.65mm |
Minimum Operating Temperature | -55 °C |