- RS Stock No.:
- 812-3233
- Mfr. Part No.:
- SI4599DY-T1-GE3
- Manufacturer:
- Vishay
- RS Stock No.:
- 812-3233
- Mfr. Part No.:
- SI4599DY-T1-GE3
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Dual N/P-Channel MOSFET, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
---|---|
Channel Type | N, P |
Maximum Continuous Drain Current | 4.7 A, 6.8 A |
Maximum Drain Source Voltage | 40 V |
Package Type | SOIC |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 42.5 mΩ, 62 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 3 W, 3.1 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 5mm |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 2 |
Transistor Material | Si |
Width | 4mm |
Typical Gate Charge @ Vgs | 11.7 nC @ 10 V, 25 nC @ 10 V |
Height | 1.55mm |
Minimum Operating Temperature | -55 °C |