BUZ11-NR4941 N-Channel MOSFET, 30 A, 50 V, 3-Pin TO-220AB ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 30 A
Maximum Drain Source Voltage 50 V
Maximum Drain Source Resistance 40 mΩ
Minimum Gate Threshold Voltage 2.1V
Maximum Gate Source Voltage -20 V, +20 V
Package Type TO-220AB
Mounting Type Through Hole
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Maximum Power Dissipation 75 W
Width 4.83mm
Number of Elements per Chip 1
Height 16.51mm
Length 10.67mm
Transistor Material Si
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
1835 In stock for delivery within 3 working days
Price Each (In a Pack of 5)
SGD 1.896
(exc. GST)
SGD 2.029
(inc. GST)
units
Per unit
Per Pack*
5 - 20
SGD1.896
SGD9.48
25 - 95
SGD1.71
SGD8.55
100 - 245
SGD1.708
SGD8.54
250 - 495
SGD1.526
SGD7.63
500 +
SGD1.508
SGD7.54
*price indicative
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