N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220FP STMicroelectronics STF13NM60N

RS Stock No.:: 761-2751
Mfr. Part No.:: STF13NM60N
Manufacturer:: STMicroelectronics

N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220FP STMicroelectronics STF13NM60N

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Added

Price Each

SGD3.74

(exc. GST)

SGD4.08

(inc. GST)

Units	Per unit
1 - 9	SGD3.74
10 - 49	SGD3.65
50 - 99	SGD3.56
100 - 249	SGD3.49
250 +	SGD3.42

RS Stock No.:: 761-2751
Mfr. Part No.:: STF13NM60N
Manufacturer:: STMicroelectronics

Technical data sheets

Legislation and Compliance

Product Details

N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in a TO-220FP package

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.

All features

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, STMicroelectronics

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220FP
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	360 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	25 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Typical Gate Charge @ Vgs	30 nC @ 10 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Width	4.6mm
Length	10.4mm
Transistor Material	Si
Series	MDmesh
Height	16.4mm