FDN357N N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 1.9 A
Maximum Drain Source Voltage 30 V
Maximum Drain Source Resistance 600 mΩ
Minimum Gate Threshold Voltage 1V
Maximum Gate Source Voltage -20 V, +20 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 500 mW
Height 0.94mm
Maximum Operating Temperature +150 °C
Length 2.92mm
Width 1.4mm
Number of Elements per Chip 1
Transistor Material Si
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 4.2 nC @ 5 V
210 In stock for delivery within 3 working days
Price Each (In a Pack of 5)
SGD 0.632
(exc. GST)
SGD 0.676
(inc. GST)
units
Per unit
Per Pack*
5 - 20
SGD0.632
SGD3.16
25 - 95
SGD0.528
SGD2.64
100 - 245
SGD0.418
SGD2.09
250 - 495
SGD0.414
SGD2.07
500 +
SGD0.41
SGD2.05
*price indicative
Packaging Options:
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