P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB Infineon IRF5305PBF

RS Stock No.:: 541-1736
Mfr. Part No.:: IRF5305PBF
Manufacturer:: Infineon

P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB Infineon IRF5305PBF

Temporarily out of stock - back order for despatch 03/05/2024, delivery within 4 working days from despatch date

Added

Price Each

SGD1.90

(exc. GST)

SGD2.07

(inc. GST)

Units	Per unit
1 - 9	SGD1.90
10 - 49	SGD1.85
50 - 99	SGD1.79
100 - 249	SGD1.73
250 +	SGD1.69

RS Stock No.:: 541-1736
Mfr. Part No.:: IRF5305PBF
Manufacturer:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	55 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	60 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.69mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	63 nC @ 10 V
Length	10.54mm
Series	HEXFET
Minimum Operating Temperature	-55 °C
Height	8.77mm