P-Channel MOSFET, 460 mA, 25 V, 3-Pin SOT-23 onsemi FDV304P
- RS Stock No.:
- 354-4913
- Mfr. Part No.:
- FDV304P
- Manufacturer:
- onsemi
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Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price Each
SGD0.54
(exc. GST)
SGD0.59
(inc. GST)
| Units | Per unit |
| 1 - 2 | SGD0.54 |
| 3 - 4 | SGD0.52 |
| 5 + | SGD0.49 |
- RS Stock No.:
- 354-4913
- Mfr. Part No.:
- FDV304P
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 460 mA |
| Maximum Drain Source Voltage | 25 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.1 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.65V |
| Maximum Power Dissipation | 350 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | +8 V |
| Length | 2.92mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 1.1 nC @ 4.5 V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Width | 1.3mm |
| Height | 0.93mm |
| Minimum Operating Temperature | -55 °C |