Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 Infineon IMW65R048M1HXKSA1
- RS Stock No.:
- 232-0389
- Mfr. Part No.:
- IMW65R048M1HXKSA1
- Manufacturer:
- Infineon
30 In stock for delivery within 4 working days
Added
Price Each (In a Tube of 30)
SGD16.713
(exc. GST)
SGD18.217
(inc. GST)
| Units | Per unit | Per Tube* |
| 30 - 60 | SGD16.713 | SGD501.39 |
| 90 - 120 | SGD16.086 | SGD482.58 |
| 150 + | SGD15.081 | SGD452.43 |
| *price indicative | ||
- RS Stock No.:
- 232-0389
- Mfr. Part No.:
- IMW65R048M1HXKSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon has SiC MOSFET delivering reliable and cost-effective performance in TO247 3-pin package. The CoolSiC MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation.
Low capacitances
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard drivers
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard drivers
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 39 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.064 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.7V |
| Transistor Material | Silicon |
| Number of Elements per Chip | 1 |
| Series | CoolSiC |