N-Channel MOSFET, 4.3 A, 60 V, 3-Pin SOT-23 Vishay SQ2362ES-T1_GE3

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 95mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 3W and continuous drain current of 4.3A. It has a driving voltage of 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET

• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested

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