Dual P-Channel MOSFET, 4 A, 30 V, 8-Pin TSMT-8 ROHM QS8J4TR
- RS Stock No.:
- 178-5996
- Mfr. Part No.:
- QS8J4TR
- Manufacturer:
- ROHM
Discontinued product
- RS Stock No.:
- 178-5996
- Mfr. Part No.:
- QS8J4TR
- Manufacturer:
- ROHM
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- JP
Product Details
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
4Ｖ-drive type
Pch+Pch Middle-power MOSFET
Fast Switching Speed
Small Surface Mount Package
Pb Free
Pch+Pch Middle-power MOSFET
Fast Switching Speed
Small Surface Mount Package
Pb Free
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | TSMT-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 84 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.5 W |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +150 °C |
| Length | 3.1mm |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V (N Channel) |
| Width | 2.5mm |
| Height | 0.8mm |
| Forward Diode Voltage | 1.2V |
| Series | QS8J4 |