FFSP2065A SiC MOSFET, 2+Tab-Pin TO-220 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

ON Semiconductor SiC Schottky Diodes

This range of Silicon Carbide (SiC) Schottky Diodes from ON Semiconductor use a completely new technology providing superior switching performance as well as higher reliability to silicon. No reverse recovery current and temperature independent switching characteristics along with excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.

System benefits include the highest efficiency, even faster operating frequency, greater power density and reduced EMI topped off with reduced system size and overall cost.

Features & Benefits

• Max Junction Temperature 175 °C
• High Surge Current Capacity
• Positive Temperature Coefficient
• No Reverse Recovery / No Forward Recovery
• Suitable for applications such as PFC, Industrial Power, Solar, EV Charger, UPS and Welding

Specifications
Attribute Value
Package Type TO-220
Mounting Type Through Hole
Pin Count 2 + Tab
Maximum Power Dissipation 187 W
Transistor Configuration Single
Number of Elements per Chip 1
Transistor Material SiC
Height 15.21mm
Maximum Operating Temperature +175 °C
Length 10.36mm
Minimum Operating Temperature -55 °C
Forward Diode Voltage 2.4V
Width 4.67mm
800 In stock for delivery within 3 working days
Price Each (In a Tube of 800)
SGD 7.422
(exc. GST)
SGD 7.942
(inc. GST)
units
Per unit
Per Tube*
800 +
SGD7.422
SGD5,937.60
*price indicative
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