P-Channel MOSFET, 16 A, 45 V, 3-Pin DPAK ROHM RD3H160SPTL1
- RS Stock No.:
- 172-0477
- Mfr. Part No.:
- RD3H160SPTL1
- Manufacturer:
- ROHM
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price Each (In a Pack of 25)
SGD1.911
(exc. GST)
SGD2.083
(inc. GST)
| Units | Per unit | Per Pack* |
| 25 - 225 | SGD1.911 | SGD47.775 |
| 250 - 475 | SGD1.871 | SGD46.775 |
| 500 - 975 | SGD1.814 | SGD45.35 |
| 1000 - 1975 | SGD1.76 | SGD44.00 |
| 2000 + | SGD1.707 | SGD42.675 |
| *price indicative | ||
- RS Stock No.:
- 172-0477
- Mfr. Part No.:
- RD3H160SPTL1
- Manufacturer:
- ROHM
Technical data sheets
Legislation and Compliance
Product Details
RD3H160SP is a Power MOSFET with Low on - resistance., suitable for Switching.
Low on-resistance.
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating
Fast switching speed.
Drive circuits can be simple.
Parallel use is easy.
Pb-free plating
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 16 A |
| Maximum Drain Source Voltage | 45 V |
| Package Type | DPAK (TO-252) |
| Series | RD3H160SP |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 70 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 20 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Typical Gate Charge @ Vgs | 16 nC @ 5 V |
| Length | 6.8mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Width | 6.4mm |
| Minimum Operating Temperature | -55 °C |
| Height | 2.3mm |
| Forward Diode Voltage | 1.2V |