N-Channel MOSFET, 7.2 A, 30 V, 3-Pin SOT-23 Nexperia PMV20XNER
- RS Stock No.:
- 170-5372
- Mfr. Part No.:
- PMV20XNER
- Manufacturer:
- Nexperia
25 In stock for delivery within 4 working days
Added
Price Each (In a Pack of 25)
SGD0.41
(exc. GST)
SGD0.45
(inc. GST)
| Units | Per unit | Per Pack* |
| 25 - 225 | SGD0.41 | SGD10.25 |
| 250 - 600 | SGD0.395 | SGD9.875 |
| 625 - 1225 | SGD0.375 | SGD9.375 |
| 1250 - 2475 | SGD0.356 | SGD8.90 |
| 2500 + | SGD0.339 | SGD8.475 |
| *price indicative | ||
- RS Stock No.:
- 170-5372
- Mfr. Part No.:
- PMV20XNER
- Manufacturer:
- Nexperia
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Robust interfacing between asynchronous and synchronous systems. Flip-flops are basic storage elements in digital electronics. By only allowing the output to change on an edge transition, flip-flops provide a robust interface between asynchronous and synchronous systems. With a choice of either positive or negative edge triggered options they provide added design flexibility.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Enhanced power dissipation capability of 1200 mW
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Target applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
Low threshold voltage
Enhanced power dissipation capability of 1200 mW
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Target applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 7.2 A |
| Maximum Drain Source Voltage | 30 V |
| Series | PMV20XNE |
| Package Type | TO-236 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 38 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.9V |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 6.94 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 12 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Width | 1.4mm |
| Length | 3mm |
| Typical Gate Charge @ Vgs | 12.4 nC @ 4.5 V |
| Height | 1mm |
| Minimum Operating Temperature | -55 °C |