N-Channel MOSFET, 184 A, 55 V, 4-Pin LFPAK, SOT-669 Nexperia BUK9Y19-55B,115
- RS Stock No.:
- 170-5335
- Mfr. Part No.:
- BUK9Y19-55B,115
- Manufacturer:
- Nexperia
550 In stock for delivery within 4 working days
Added
Price Each (In a Pack of 25)
SGD1.088
(exc. GST)
SGD1.186
(inc. GST)
| Units | Per unit | Per Pack* |
| 25 - 100 | SGD1.088 | SGD27.20 |
| 125 - 225 | SGD1.065 | SGD26.625 |
| 250 - 600 | SGD1.033 | SGD25.825 |
| 625 - 1225 | SGD1.002 | SGD25.05 |
| 1250 + | SGD0.972 | SGD24.30 |
| *price indicative | ||
- RS Stock No.:
- 170-5335
- Mfr. Part No.:
- BUK9Y19-55B,115
- Manufacturer:
- Nexperia
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- PH
Product Details
From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.
Suitable for thermally demanding environments due to 175°C rating Focus MOSFET applications Electric Power Steering Engine management Integrated starter generator Transmission Control Automotive Lighting Braking (ABS) Climate control
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed for use in automotive critical applications.
low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 184 A |
| Maximum Drain Source Voltage | 55 V |
| Series | BUK9Y19 |
| Package Type | LFPAK, SOT-669 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 40 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.3V |
| Minimum Gate Threshold Voltage | 0.5V |
| Maximum Power Dissipation | 85 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 15 V |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 18 nC @ 5 V |
| Length | 5mm |
| Number of Elements per Chip | 1 |
| Width | 4.1mm |
| Height | 1.05mm |
| Automotive Standard | AEC-Q101 |
| Minimum Operating Temperature | -55 °C |