2N7000 N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): GB
Product Details

Advanced Power MOSFET, Fairchild Semiconductor

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 200 mA
Maximum Drain Source Voltage 60 V
Package Type TO-92
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 5 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.8V
Maximum Power Dissipation 400 mW
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Height 5.33mm
Maximum Operating Temperature +150 °C
Length 5.2mm
Transistor Material Si
Width 4.19mm
20000 In stock for delivery within 3 working days
Price Each (On a Reel of 10000)
SGD 0.175
(exc. GST)
SGD 0.187
(inc. GST)
units
Per unit
Per Reel*
10000 +
SGD0.175
SGD1,750.00
*price indicative
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