N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247 Toshiba TK35N65W,S1F(S

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Discontinued product

Technical data sheets

MOSFET Transistors, Toshiba

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	35 A
Maximum Drain Source Voltage	650 V
Series	TK
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	80 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Maximum Power Dissipation	270 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Width	5.02mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	100 nC @ 10 V
Transistor Material	Si
Length	15.94mm
Height	20.95mm